dmn2400uv document number: ds31852 rev. 7 - 2 1 of 6 www.diodes.com january 2011 ? diodes incorporated dmn2400uv dual n-channel enhancement mode mosfet features ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected up to 2kv ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-563 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.006 grams (approximate) ordering information (note 3) part number case packaging DMN2400UV-7 sot-563 3,000/tape & reel dmn2400uv-13 sot-563 10,000/tape & reel notes: 1. no purposefully added lead. 2. diodes inc.?s ?green? policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2009 2010 2011 2012 2013 2014 2015 code w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot-563 top view top view internal schematic esd protected to 2kv bottom view s 1 d 1 d 2 s 2 g 1 g 2 24n ym 24n and nab = marking code ym = date code marking y = year (ex: w = 2009) m = month (ex: 9 = september) nab ym
dmn2400uv document number: ds31852 rev. 7 - 2 2 of 6 www.diodes.com january 2011 ? diodes incorporated dmn2400uv maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 12 v continuous drain current (note 4) steady state t a = 25 c t a = 85 c i d 1.33 0.84 a pulsed drain current i dm 3 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 4) p d 530 mw thermal resistance, junction to ambient r ja 233.8 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 20 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25c i dss - - 100 na v ds = 20v, v gs = 0v gate-source leakage i gss - - 1.0 a v gs = 4.5v, v ds = 0v - - 50 v gs = 10v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs ( th ) 0.5 - 0.9 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 0.3 0.48 v gs = 5.0v, i d = 200ma - 0.35 0.5 v gs = 4.5v, i d = 600ma - 0.45 0.7 v gs = 2.5v, i d = 500ma - 0.55 0.9 v gs = 1.8v, i d = 350ma - 0.65 1.5 v gs = 1.5v, i d = 50ma forward transfer admittance |y fs | - 1.4 - s v ds = 10v, i d = 400ma diode forward voltage (note 5) v sd 0.7 1.2 v v gs = 0v, i s = 150ma, f = 1.0mhz dynamic characteristics (note 6) input capacitance c iss - 36.0 - pf v ds =16v, v gs = 0v, f = 1.0mhz output capacitance c oss - 5.7 - pf reverse transfer capacitance c rss - 4.2 - pf gate resistance r g - 68 - v ds = 0v, v gs = 0v, total gate charge q g - 0.5 - nc v gs =4.5v, v ds = 10v, i d =250ma gate-source charge q g s - 0.07 - nc gate-drain charge q g d - 0.1 - nc turn-on delay time t d ( on ) - 4.06 - ns v dd = 10v, v gs = 4.5v, r l = 47 ? , r g = 10 ? , i d = 200ma turn-on rise time t r - 7.28 - ns turn-off delay time t d ( off ) - 13.74 - ns turn-off fall time t f - 10.54 - ns notes: 4. device soldered onto fr-4 pcb, minimum recommended sol dering pad dimensions (25.4mm x 25.4mm x1.6mm, 2oz cu pad: 0.18 mm 2 x 6). 5. short duration pulse test used to minimize self-heating effect. 6. guaranteed by design. not subject to product testing.
dmn2400uv document number: ds31852 rev. 7 - 2 3 of 6 www.diodes.com january 2011 ? diodes incorporated dmn2400uv 0 0.5 1.0 1.5 2.0 01 2 345 fig. 1 typical output characteristics v , drain-source voltage (v) ds i, d r ai n c u r r e n t (a) d v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 4.5v gs v = 1.2v gs v = 1.8v gs 0 0.5 1.0 1.5 0 0.5 1 1.5 2 2.5 3 i, d r ain c u r r en t (a) d fig. 2 typical transfer characteristics v , gate source voltage (v) gs v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a 0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 1.6 2 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) v = 1.8v gs v = 4.5v gs v = 2.5v gs v = 1.5v gs v = 5.0v gs 0 0.2 0.4 0.6 0.8 0 0.4 0.8 1.2 1.6 i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r ain-s o u r c e on-resistance (normalized) ds(on) v = 2.5.v i = 500ma gs d v = 4.5v i = 1.0a gs d 0 0.2 0.4 0.6 0.8 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d
dmn2400uv document number: ds31852 rev. 7 - 2 4 of 6 www.diodes.com january 2011 ? diodes incorporated dmn2400uv 0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 250a d i = 1ma d 0 0.4 0.8 1.2 1.6 0 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current 0.2 i, s o u r c e c u r r en t (a) s t = 25c a 0 10 20 30 40 50 60 0 5 10 15 20 fig. 9 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e (p f ) f = 1mhz c iss c oss c rss 0.1 1 10 100 1,000 2 4 6 8 10 12 14 16 18 20 fig. 10 typical drain-source leakage current vs. drain-source voltage v , drain-source voltage (v) ds i, d r ain-s o u r c e leaka g e c u r r en t (na) dss t = 25c a t = 85c a t = 125c a t = 150c a t = -55c a 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5 0.6 fig. 11 gate-charge characteristics q , total gate charge (nc) g v , gate-source voltage (v) gs v = 10v i = 250ma ds d
dmn2400uv document number: ds31852 rev. 7 - 2 5 of 6 www.diodes.com january 2011 ? diodes incorporated dmn2400uv 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 12 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 221c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5 package outline dimensions suggested pad layout sot-563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 a m l b c h k g d x z y c1 c2 c2 g
dmn2400uv document number: ds31852 rev. 7 - 2 6 of 6 www.diodes.com january 2011 ? diodes incorporated dmn2400uv important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com
|
